Temperature dependent electron transport properties of degenerate SnO2 thin films

The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a...

Full description

Saved in:
Bibliographic Details
Published in:Journal of alloys and compounds 2017-01, Vol.692, p.119-123
Main Authors: Boyalı, E., Baran, V., Asar, T., Özçelik, S., Kasap, M.
Format: Article
Language:English
Subjects:
Conductivity
Electrical properties
Electron scattering
Electron transport
Hall effect
Localization
Magnetron sputtering
Scattering
Scattering coefficients
Silicon substrates
SnO2
Temperature
Thin films
Tin dioxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3. •The degenerate SnO2 thin films were deposited by using the sputtering system.•Hall effect measurements were carried out as a function of temperature.•The conductivity has been analyzed by using a comprehensive conductivity model.•The model includes the electron-electron scattering and weak localizations effects.•SnO2 films with n > 1019 cm−3 are on the metallic side of MIT.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2016.09.011