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Temperature dependent electron transport properties of degenerate SnO2 thin films
The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a...
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Published in: | Journal of alloys and compounds 2017-01, Vol.692, p.119-123 |
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container_title | Journal of alloys and compounds |
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creator | Boyalı, E. Baran, V. Asar, T. Özçelik, S. Kasap, M. |
description | The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3.
•The degenerate SnO2 thin films were deposited by using the sputtering system.•Hall effect measurements were carried out as a function of temperature.•The conductivity has been analyzed by using a comprehensive conductivity model.•The model includes the electron-electron scattering and weak localizations effects.•SnO2 films with n > 1019 cm−3 are on the metallic side of MIT. |
doi_str_mv | 10.1016/j.jallcom.2016.09.011 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1933978963</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925838816327451</els_id><sourcerecordid>1933978963</sourcerecordid><originalsourceid>FETCH-LOGICAL-c267t-86d044880b16c086491310b436dc4ca1052096629cd010e0f564c108bde7c5a03</originalsourceid><addsrcrecordid>eNqFkFtLxDAQhYMouK7-BCHgc-uklzR5Elm8wcIirs-hm0y1pU1qkhX892ZZ330aBs45M-cj5JpBzoDx2yEf2nHUbsqLtOYgc2DshCyYaMqs4lyekgXIos5EKcQ5uQhhAAAmS7Ygr1ucZvRt3HukBme0Bm2kOKKO3lkafWvD7Hyks3dJGHsM1HVJ-oH24EP6ZjcFjZ-9pV0_TuGSnHXtGPDqby7J--PDdvWcrTdPL6v7daYL3sRMcANVJQTsGNcgeCVZyWBXldzoSrcM6gIk54XUBhggdDWvNAOxM9jouoVySW6Ouemxrz2GqAa39zadVKlaKRsheZlU9VGlvQvBY6dm30-t_1EM1IGeGtQfPXWgp0CqRC_57o4-TBW-e_Qq6B6tRtP7hEYZ1_-T8As2C3qx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1933978963</pqid></control><display><type>article</type><title>Temperature dependent electron transport properties of degenerate SnO2 thin films</title><source>ScienceDirect Journals</source><creator>Boyalı, E. ; Baran, V. ; Asar, T. ; Özçelik, S. ; Kasap, M.</creator><creatorcontrib>Boyalı, E. ; Baran, V. ; Asar, T. ; Özçelik, S. ; Kasap, M.</creatorcontrib><description>The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3.
•The degenerate SnO2 thin films were deposited by using the sputtering system.•Hall effect measurements were carried out as a function of temperature.•The conductivity has been analyzed by using a comprehensive conductivity model.•The model includes the electron-electron scattering and weak localizations effects.•SnO2 films with n > 1019 cm−3 are on the metallic side of MIT.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2016.09.011</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Conductivity ; Electrical properties ; Electron scattering ; Electron transport ; Hall effect ; Localization ; Magnetron sputtering ; Scattering ; Scattering coefficients ; Silicon substrates ; SnO2 ; Temperature ; Thin films ; Tin dioxide</subject><ispartof>Journal of alloys and compounds, 2017-01, Vol.692, p.119-123</ispartof><rights>2016 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jan 25, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c267t-86d044880b16c086491310b436dc4ca1052096629cd010e0f564c108bde7c5a03</citedby><cites>FETCH-LOGICAL-c267t-86d044880b16c086491310b436dc4ca1052096629cd010e0f564c108bde7c5a03</cites><orcidid>0000-0002-2430-0599</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Boyalı, E.</creatorcontrib><creatorcontrib>Baran, V.</creatorcontrib><creatorcontrib>Asar, T.</creatorcontrib><creatorcontrib>Özçelik, S.</creatorcontrib><creatorcontrib>Kasap, M.</creatorcontrib><title>Temperature dependent electron transport properties of degenerate SnO2 thin films</title><title>Journal of alloys and compounds</title><description>The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3.
•The degenerate SnO2 thin films were deposited by using the sputtering system.•Hall effect measurements were carried out as a function of temperature.•The conductivity has been analyzed by using a comprehensive conductivity model.•The model includes the electron-electron scattering and weak localizations effects.•SnO2 films with n > 1019 cm−3 are on the metallic side of MIT.</description><subject>Conductivity</subject><subject>Electrical properties</subject><subject>Electron scattering</subject><subject>Electron transport</subject><subject>Hall effect</subject><subject>Localization</subject><subject>Magnetron sputtering</subject><subject>Scattering</subject><subject>Scattering coefficients</subject><subject>Silicon substrates</subject><subject>SnO2</subject><subject>Temperature</subject><subject>Thin films</subject><subject>Tin dioxide</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkFtLxDAQhYMouK7-BCHgc-uklzR5Elm8wcIirs-hm0y1pU1qkhX892ZZ330aBs45M-cj5JpBzoDx2yEf2nHUbsqLtOYgc2DshCyYaMqs4lyekgXIos5EKcQ5uQhhAAAmS7Ygr1ucZvRt3HukBme0Bm2kOKKO3lkafWvD7Hyks3dJGHsM1HVJ-oH24EP6ZjcFjZ-9pV0_TuGSnHXtGPDqby7J--PDdvWcrTdPL6v7daYL3sRMcANVJQTsGNcgeCVZyWBXldzoSrcM6gIk54XUBhggdDWvNAOxM9jouoVySW6Ouemxrz2GqAa39zadVKlaKRsheZlU9VGlvQvBY6dm30-t_1EM1IGeGtQfPXWgp0CqRC_57o4-TBW-e_Qq6B6tRtP7hEYZ1_-T8As2C3qx</recordid><startdate>20170125</startdate><enddate>20170125</enddate><creator>Boyalı, E.</creator><creator>Baran, V.</creator><creator>Asar, T.</creator><creator>Özçelik, S.</creator><creator>Kasap, M.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0002-2430-0599</orcidid></search><sort><creationdate>20170125</creationdate><title>Temperature dependent electron transport properties of degenerate SnO2 thin films</title><author>Boyalı, E. ; Baran, V. ; Asar, T. ; Özçelik, S. ; Kasap, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c267t-86d044880b16c086491310b436dc4ca1052096629cd010e0f564c108bde7c5a03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Conductivity</topic><topic>Electrical properties</topic><topic>Electron scattering</topic><topic>Electron transport</topic><topic>Hall effect</topic><topic>Localization</topic><topic>Magnetron sputtering</topic><topic>Scattering</topic><topic>Scattering coefficients</topic><topic>Silicon substrates</topic><topic>SnO2</topic><topic>Temperature</topic><topic>Thin films</topic><topic>Tin dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Boyalı, E.</creatorcontrib><creatorcontrib>Baran, V.</creatorcontrib><creatorcontrib>Asar, T.</creatorcontrib><creatorcontrib>Özçelik, S.</creatorcontrib><creatorcontrib>Kasap, M.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boyalı, E.</au><au>Baran, V.</au><au>Asar, T.</au><au>Özçelik, S.</au><au>Kasap, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependent electron transport properties of degenerate SnO2 thin films</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2017-01-25</date><risdate>2017</risdate><volume>692</volume><spage>119</spage><epage>123</epage><pages>119-123</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3.
•The degenerate SnO2 thin films were deposited by using the sputtering system.•Hall effect measurements were carried out as a function of temperature.•The conductivity has been analyzed by using a comprehensive conductivity model.•The model includes the electron-electron scattering and weak localizations effects.•SnO2 films with n > 1019 cm−3 are on the metallic side of MIT.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2016.09.011</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2430-0599</orcidid></addata></record> |
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subjects | Conductivity Electrical properties Electron scattering Electron transport Hall effect Localization Magnetron sputtering Scattering Scattering coefficients Silicon substrates SnO2 Temperature Thin films Tin dioxide |
title | Temperature dependent electron transport properties of degenerate SnO2 thin films |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T20%3A45%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature%20dependent%20electron%20transport%20properties%20of%20degenerate%20SnO2%20thin%20films&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Boyal%C4%B1,%20E.&rft.date=2017-01-25&rft.volume=692&rft.spage=119&rft.epage=123&rft.pages=119-123&rft.issn=0925-8388&rft.eissn=1873-4669&rft_id=info:doi/10.1016/j.jallcom.2016.09.011&rft_dat=%3Cproquest_cross%3E1933978963%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c267t-86d044880b16c086491310b436dc4ca1052096629cd010e0f564c108bde7c5a03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1933978963&rft_id=info:pmid/&rfr_iscdi=true |