Conduction Mechanisms in Multiferroic Multilayer BaTiO3/NiFe^sub 2^O^sub 4^/BaTiO3 Memristors

Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/B...

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Bibliographic Details
Published in:Journal of electronic materials 2017-10, Vol.46 (10), p.5492
Main Authors: Samardzic, N, Bajac, B, Srdic, V V, Stojanovic, G M
Format: Article
Language:English
Subjects:
Analog circuits
Barium titanates
Circuits
Coating effects
Conductivity
Current voltage characteristics
Electrical equipment
Intermetallic compounds
Iron compounds
Materials science
Memory devices
Memristors
Multiferroic materials
Nickel compounds
Operating temperature
Thermionic emission
Thin films
Wafers
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Summary:Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/BaTiO3 thin films, fabricated by a spin-coating deposition technique on platinized Si wafers. This cost-effective device shows symmetric and reproducible current-voltage characteristics for the actuating voltage amplitude of ±10 V. The origin of the conduction mechanism was investigated by measuring the electrical response in different voltage and temperature conditions. The results indicate the existence of two mechanisms: thermionic emission and Fowler-Nordheim tunnelling, which alternate with actuating voltage amplitude and operating temperature.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5618-2