Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

NH 3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron co...

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Bibliographic Details
Published in:Journal of electronic materials 2017-10, Vol.46 (10), p.6104-6110
Main Authors: Lumbantoruan, Franky J., Wong, Yuen-Yee, Huang, Wei-Ching, Yu, Hung-Wei, Chang, Edward-Yi
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Carbon
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electron density
Electron gas
Electronics
Electronics and Microelectronics
Flow velocity
Instrumentation
Materials Science
Optical and Electronic Materials
Solid State Physics
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Summary:NH 3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH 3 due to the presence of higher carbon impurity (2.6 × 10 19  cm −2 ). When the NH 3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 10 18 atom cm −3 and the 2 DEG electron density recovered to 9.57 × 10 12  cm −2 .
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5550-5