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Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
NH 3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron co...
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| Published in: | Journal of electronic materials 2017-10, Vol.46 (10), p.6104-6110 |
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| Main Authors: | , , , , |
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| cites | cdi_FETCH-LOGICAL-c316t-97c2961d2ff9b33f127e07d00020cf83930ce4c43ec6bbfb371cb3541a88c7883 |
| container_end_page | 6110 |
| container_issue | 10 |
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| container_title | Journal of electronic materials |
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| creator | Lumbantoruan, Franky J. Wong, Yuen-Yee Huang, Wei-Ching Yu, Hung-Wei Chang, Edward-Yi |
| description | NH
3
flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH
3
due to the presence of higher carbon impurity (2.6 × 10
19
cm
−2
). When the NH
3
flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 10
18
atom cm
−3
and the 2 DEG electron density recovered to 9.57 × 10
12
cm
−2
. |
| doi_str_mv | 10.1007/s11664-017-5550-5 |
| format | article |
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3
flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH
3
due to the presence of higher carbon impurity (2.6 × 10
19
cm
−2
). When the NH
3
flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 10
18
atom cm
−3
and the 2 DEG electron density recovered to 9.57 × 10
12
cm
−2
.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-017-5550-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum gallium nitrides ; Carbon ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electron density ; Electron gas ; Electronics ; Electronics and Microelectronics ; Flow velocity ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Solid State Physics</subject><ispartof>Journal of electronic materials, 2017-10, Vol.46 (10), p.6104-6110</ispartof><rights>The Minerals, Metals & Materials Society 2017</rights><rights>Journal of Electronic Materials is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-97c2961d2ff9b33f127e07d00020cf83930ce4c43ec6bbfb371cb3541a88c7883</citedby><cites>FETCH-LOGICAL-c316t-97c2961d2ff9b33f127e07d00020cf83930ce4c43ec6bbfb371cb3541a88c7883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27900,27901</link.rule.ids></links><search><creatorcontrib>Lumbantoruan, Franky J.</creatorcontrib><creatorcontrib>Wong, Yuen-Yee</creatorcontrib><creatorcontrib>Huang, Wei-Ching</creatorcontrib><creatorcontrib>Yu, Hung-Wei</creatorcontrib><creatorcontrib>Chang, Edward-Yi</creatorcontrib><title>Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>NH
3
flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH
3
due to the presence of higher carbon impurity (2.6 × 10
19
cm
−2
). When the NH
3
flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 10
18
atom cm
−3
and the 2 DEG electron density recovered to 9.57 × 10
12
cm
−2
.</description><subject>Aluminum gallium nitrides</subject><subject>Carbon</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electron density</subject><subject>Electron gas</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Flow velocity</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Solid State Physics</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAQhi0EEqXwAGyWmE19cWwnYyltg1QKQkVisxLXpqlKE2xHVd-epGFgYblb_u-_04fQLdB7oFSOPIAQMaEgCeecEn6GBsBjRiARH-doQJkAwiPGL9GV91tKgUMCA3SYWmt08LiyeJkxPNtVB_yWB4MfG1fuP_F4N8-X-CF3rjQOL_JjO-euOoQNrvY4bAx-btOuzHf41VW1caE0p7YTOOrgbPq8wplpU5UPrtGhceYaXdh8583N7x6i99l0NcnI4mX-NBkviGYgAkmljlIB68jatGDMQiQNlWtKaUS1TVjKqDaxjpnRoihswSTogvEY8iTRMknYEN31vbWrvhvjg9pWjdu3JxWkLI4iKSRrU9CndPuid8aq2pVfuTsqoKrzq3q_qvWrOr-Kt0zUM77uRBn3p_lf6AfsCHv3</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Lumbantoruan, Franky J.</creator><creator>Wong, Yuen-Yee</creator><creator>Huang, Wei-Ching</creator><creator>Yu, Hung-Wei</creator><creator>Chang, Edward-Yi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PHGZM</scope><scope>PHGZT</scope><scope>PKEHL</scope><scope>PQEST</scope><scope>PQGLB</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20171001</creationdate><title>Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure</title><author>Lumbantoruan, Franky J. ; Wong, Yuen-Yee ; Huang, Wei-Ching ; Yu, Hung-Wei ; Chang, Edward-Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-97c2961d2ff9b33f127e07d00020cf83930ce4c43ec6bbfb371cb3541a88c7883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum gallium nitrides</topic><topic>Carbon</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electron density</topic><topic>Electron gas</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Flow velocity</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lumbantoruan, Franky J.</creatorcontrib><creatorcontrib>Wong, Yuen-Yee</creatorcontrib><creatorcontrib>Huang, Wei-Ching</creatorcontrib><creatorcontrib>Yu, Hung-Wei</creatorcontrib><creatorcontrib>Chang, Edward-Yi</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest Central (New)</collection><collection>ProQuest One Academic (New)</collection><collection>ProQuest One Academic Middle East (New)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Applied & Life Sciences</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lumbantoruan, Franky J.</au><au>Wong, Yuen-Yee</au><au>Huang, Wei-Ching</au><au>Yu, Hung-Wei</au><au>Chang, Edward-Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>46</volume><issue>10</issue><spage>6104</spage><epage>6110</epage><pages>6104-6110</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>NH
3
flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH
3
due to the presence of higher carbon impurity (2.6 × 10
19
cm
−2
). When the NH
3
flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 10
18
atom cm
−3
and the 2 DEG electron density recovered to 9.57 × 10
12
cm
−2
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-017-5550-5</doi><tpages>7</tpages></addata></record> |
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| subjects | Aluminum gallium nitrides Carbon Characterization and Evaluation of Materials Chemistry and Materials Science Electron density Electron gas Electronics Electronics and Microelectronics Flow velocity Instrumentation Materials Science Optical and Electronic Materials Solid State Physics |
| title | Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure |
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