Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ -doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structur...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2017-09, Vol.90 (9), p.1-6, Article 162
Main Authors: Sari, Huseyin, Kasapoglu, Esin, Yesilgul, Unal, Sakiroglu, Serpil, Ungan, Fatih, Sökmen, Ismail
Format: Article
Language:English
Subjects:
Absorptivity
Complex Systems
Condensed Matter Physics
Energy levels
Fluid- and Aerodynamics
Gallium arsenide
Lasers
Mathematical analysis
Nonlinear optics
Optical properties
Physics
Physics and Astronomy
Quantum wells
Refractivity
Regular Article
Schrodinger equation
Solid State Physics
Wave functions
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Summary:The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ -doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the δ -doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2017-80210-9