Direct comparison of fractional and integer quantized Hall resistance

We present precision measurements of the fractional quantized Hall effect, where the quantized resistance R[1/3] in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance R[2], represented by an integer quantum Hall state at filling factor 2. A cryogenic cur...

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Bibliographic Details
Published in:Metrologia 2017-08, Vol.54 (4), p.1
Main Authors: Ahlers, Franz J, Götz, Martin, Pierz, Klaus
Format: Article
Language:English
Subjects:
Charged particles
Comparative analysis
Cryostats
Electric currents
Fractions
Gallium arsenide
Hall effect
Measurement
Metrology
Quantum Hall effect
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Summary:We present precision measurements of the fractional quantized Hall effect, where the quantized resistance R[1/3] in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance R[2], represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of 1-(5.3 ± 6.3) 10-8 (95% confidence level) was obtained for the ratio (R[1/3]/6R[2]). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e2) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the upcoming revision of the SI.
ISSN:0026-1394
1681-7575