Quantum Hall effect in n-InGaAs/InAlAs metamorphic nanoheterostructures with high InAs content

• Published in: Journal of magnetism and magnetic materials 2017-10, Vol.440, p.10-12
• Main Authors: Gudina, Svetlana V., Arapov, Yurii G., Savelyev, Alexander P., Neverov, Vladimir N., Podgornykh, Sergey M., Shelushinina, Nina G., Yakunin, Michail V., Rogacki, Krzysztof, Vasil'evskii, Ivan S., Vinichenko, Alexander N.
• Format: Article
• Language: English
• Subjects: Conductivity; Critical exponents; Electromagnetism; Hall effect; Indium aluminum arsenides; Indium arsenides; Magnetic fields; Quantum Hall effect; Quantum wells; Scaling; Temperature dependence; Universality
• ISSN: 0304-8853; 1873-4766
• DOI: 10.1016/j.jmmm.2016.12.111

For an investigation of the quantum Hall effect on n-In0.85Ga0.18As/In0.82Al0.82As metamorphic nanoheterostructures with high InAs content the longitudinal and Hall magnetoresistances were measured in magnetic fields up to 9T at T=(1.8÷30)K. The results for a temperature dependence of conductivity on the delocalized states at the center of Landau level were analysed within the scaling concept for a plateau-plateau transition in quantum Hall regime. •Temperature dependences of resistivity in quantum Hall regime for InGaAs/InAlAs is analysed within the scaling concept.•The crossover from the high-temperature non-universal to the low-temperature universal scaling was observed.•The low-temperature values of critical exponent agree with theory prediction for short-range electron–electron interaction.•There is no significant difference between values of critical exponent for spin-polarized and spin-degenerate Landau levels.