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Room temperature multiferroism in polycrystalline thin films of gallium ferrite
We have synthesized (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates using sol-gel assisted spin coating technique. Structural characterization using x-ray diffraction and Raman spectroscopy confirms formation of single phase with cr...
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Published in: | Journal of alloys and compounds 2017-10, Vol.721, p.593-599 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have synthesized (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates using sol-gel assisted spin coating technique. Structural characterization using x-ray diffraction and Raman spectroscopy confirms formation of single phase with crystallite size ∼37–47 nm. Magnetic characterization demonstrates saturated magnetic hysteresis loop at room temperature and indicates that due to reduced crystallite size, ferri to paramagnetic transition temperature, TC ∼300 K is higher compared to bulk GFO, reported earlier. Room temperature piezo-response force microscopic analysis reveals local ∼180° phase switching of ferroelectric domains at very high coercive field, ∼700 kV/cm, consistent with recent experimental and first-principles studies. Our study opens up the possibility of integrating polycrystalline GFO in novel room temperature multiferroic devices.
•Thin films of GaFeO3 is grown on n-Si and Pt/Si by spin coating technique.•Films are single phase with (010) out of plane orientation.•Saturated loops with weak magnetization is observed at room temperature.•Piezo-domains show ∼180° phase reversal upon switching voltage at room temperature.•Films show room temperature ferroelectricity and ferrimagnetism i.e. multiferroism. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2017.05.268 |