Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

•Perpendicular magnetic anisotropy in epitaxial Cr2Te3 has been investigated.•Presence of a relatively strong second order anisotropy contribution is observed.•Magnetization reversal is explained quantitatively using a 1D defect model.•Relative roles of nucleation and pinning in magnetization revers...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2017-09, Vol.437, p.72-77
Main Authors: Pramanik, Tanmoy, Roy, Anupam, Dey, Rik, Rai, Amritesh, Guchhait, Samaresh, Movva, Hema C.P., Hsieh, Cheng-Chih, Banerjee, Sanjay K.
Format: Article
Language:English
Subjects:
Anisotropy
Chromium
Computer simulation
Epitaxial growth
Intermetallic compounds
Magnetic anisotropy
Magnetism
Magnetization reversal
Magnetoresistance
Magnetoresistivity
Molecular beam epitaxy
Switching
Tellurides
Thin films
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Summary:•Perpendicular magnetic anisotropy in epitaxial Cr2Te3 has been investigated.•Presence of a relatively strong second order anisotropy contribution is observed.•Magnetization reversal is explained quantitatively using a 1D defect model.•Relative roles of nucleation and pinning in magnetization reversal are discussed.•Domain structures and switching process are visualized by micromagnetic simulation. We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2017.04.039