Chirality dependent pinning and depinning of magnetic vortex domain walls at nano-constrictions

The implementation of magnetic domain wall (DW) based memory and logic devices critically depend on the control over DW assisted magnetization reversal processes. Here we investigate the magnetization reversal by DW injection, pinning and depinning at a geometrical constriction in permalloy nanowire...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2017-01, Vol.422, p.419-424
Main Authors: Mohanan P, Vineeth, Kumar, P.S. Anil
Format: Article
Language:English
Subjects:
Asymmetry
Chirality
Constrictions
Domain walls
Ferrous alloys
Magnetic fields
Magnetism
Magnetization reversal
Memory devices
Nano-constriction/notch
Nanowire
Nanowires
Permalloy
Statistical analysis
Stochasticity
Switching
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Summary:The implementation of magnetic domain wall (DW) based memory and logic devices critically depend on the control over DW assisted magnetization reversal processes. Here we investigate the magnetization reversal by DW injection, pinning and depinning at a geometrical constriction in permalloy nanowire (NW) driven by external in-plane magnetic field, using local electrical probes. The observations of two distinct depinning field values are identified with the help of micromagnetic simulations, as being due to vortex DWs of different chiralities. Statistical analysis gave an estimate of chirality dependent pinning probability of DWs at this constriction. The stochastic nature of the DW based reversal driven by magnetic field is revealed here. The asymmetry in the depinning field of the DWs to move to either side of constriction indicates the asymmetric nature of the barrier potential seen by the DWs. The results demonstrate the difficulties in achieving deterministic switching behavior of DW assisted reversal, and provide a platform to understand the main bottlenecks in the technological implementation of DWs.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2016.09.004