Defect structure‐electrical property relationship in Mn‐doped calcium strontium titanate dielectric ceramics

Ca0.6Sr0.4TiO3 (CST) ceramics with different amounts of Mn dopant (0‐2.0 mol%) were prepared by solid‐state reaction method. The electric field and temperature stability of energy storage performance was found to be greatly enhanced with moderate doped level of 0.5 mol%. The dielectric loss‐frequenc...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2017-10, Vol.100 (10), p.4638-4648
Main Authors: Zhang, Lin, Hao, Hua, Zhang, Shujun, Lanagan, Michael T., Yao, Zhonghua, Xu, Qi, Xie, Juan, Zhou, Jing, Cao, Minghe, Liu, Hanxing
Format: Article
Language:English
Subjects:
Activation energy
Calcium titanate
Ceramics
Defects
Dielectric loss
dielectric materials/properties
Dielectric properties
Dipoles
electrical properties
Electron paramagnetic resonance
Energy storage
Evolution
High temperature
impedance spectroscopy
Manganese
Spectra
Strontium titanates
Thermally stimulated depolarization current
vacancies
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Summary:Ca0.6Sr0.4TiO3 (CST) ceramics with different amounts of Mn dopant (0‐2.0 mol%) were prepared by solid‐state reaction method. The electric field and temperature stability of energy storage performance was found to be greatly enhanced with moderate doped level of 0.5 mol%. The dielectric loss‐frequency spectra revealed the existence and evolution of defect dipoles at elevated temperature, which was confirmed directly by electron paramagnetic resonance (EPR) spectra. The response of defect dipoles was characterized by thermally stimulated depolarization current (TSDC), where the activation energy and the concentration evolution of defect dipoles were calculated, with the highest values observed for 0.5% doped samples. The dissociation of defect dipoles and the movement of free VO·· were analyzed by high‐temperature impedance spectra analysis, with the activation energy of 1.04‐1.60 eV, and 0.5% doped samples also demonstrated the highest Ea. The relationship between microscopic defect structure and macroscopic electrical behavior was established in this work.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.14994