Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors

•Zn-doped CdS films were used as active layers in thin film transistors.•Lattice distortions and charge traps as consequence of the Zn doping.•Negative differential resistance effect due to low saturation mobility. The performance of Thin Film Transistors (TFTs) with chemically deposited Zn-doped Cd...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2017-04, Vol.192, p.161-164
Main Authors: González, Luis A., Carreón-Moncada, Iyali, Quevedo-López, Manuel A.
Format: Article
Language:English
Subjects:
Cadmium sulfide
Carrier mobility
Carrier traps
Current carriers
Defects
Electronic materials
Materials science
Semiconductor devices
Semiconductor doping
Semiconductors
Studies
Thin film transistors
Thin films
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Zn-doped CdS films were used as active layers in thin film transistors.•Lattice distortions and charge traps as consequence of the Zn doping.•Negative differential resistance effect due to low saturation mobility. The performance of Thin Film Transistors (TFTs) with chemically deposited Zn-doped CdS active layers was assessed. Charge carrier traps, induced by structural distortions, were produced by the incorporation of Zn in CdS. This phenomenon was used to engineer the operation mode of these devices. The degradation of the saturation charge-carrier mobility affected the output characteristics of the TFTs, which interestingly exhibited the negative differential resistance (NDR) effect.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2016.12.033