Annealing induced p-type conversion and substrate dependent effect of n-ZnO/p-Si heterostructure

•Successfully fabricated n-ZnO NRs/p-Si heterojunction by facile solution route.•Showed substrate resistivity dependent current-voltage response.•Extended thermal annealing found to reverse the conductivity type of ZnO.•Fabricated heterojunction showed excellent photovoltaic response. This paper rep...

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Bibliographic Details
Published in:Materials letters 2017-06, Vol.196, p.30-32
Main Authors: Kathalingam, A., Kim, Hyun-Seok
Format: Article
Language:English
Subjects:
Annealing
Conductivity
Conversion
Heat treating
Heat treatment
Materials science
n-ZnO/p-Si heterojunction
Nanorods
p-Type doping
Silicon substrates
Substrate variation
Substrates
Thermal treatment
Zinc oxide
Zinc oxides
ZnO nanorods
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Summary:•Successfully fabricated n-ZnO NRs/p-Si heterojunction by facile solution route.•Showed substrate resistivity dependent current-voltage response.•Extended thermal annealing found to reverse the conductivity type of ZnO.•Fabricated heterojunction showed excellent photovoltaic response. This paper reports the conductivity type conversion of ZnO nanorod thin film by annealing. The n-type conductivity of hydrothermally prepared ZnO nanorods was changed to p-type ZnO through thermal treatment in air ambient without doping process. The ZnO nanorod films were grown on p-Si (111) and p+-Si (100) substrates by hydrothermal method. SEM and XRD measurements showed the excellent crystalline quality and uniform morphology of the grown ZnO nanorod films. Furthermore, substrate and annealing temperature-dependent I-V responses of the films were also studied. A Schottky diode type behavior was shown by ZnO NRs grown on low resistive p-type silicon with a reasonable photoconversion efficiency.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2017.03.012