Performance improvement of flexible CZTSSe thin film solar cell by adding a Ge buffer layer

[Display omitted] •A flexible solar cell with Ge layer between Ti substrate and Mo was fabricated.•Ge diffused into CZTSSe thin film and promoted grain growth.•Ge suppressed crack formation in Mo layer due to the reduced thermal stress.•The efficiency of Ge buffered flexible CZTSSe solar cell got an...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2017-03, Vol.190, p.188-190
Main Authors: Li, Jinze, Shen, Honglie, Shang, Huirong, Li, Yufang, Wu, Wenwen
Format: Article
Language:English
Subjects:
Buffers
Crystallization
Diffusion layers
Flexible CZTSSe solar cell
Foils
Ge buffer layer
Materials science
Photovoltaic cells
Promoting effect
Solar cells
Sputtering
Thin films
Titanium
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:[Display omitted] •A flexible solar cell with Ge layer between Ti substrate and Mo was fabricated.•Ge diffused into CZTSSe thin film and promoted grain growth.•Ge suppressed crack formation in Mo layer due to the reduced thermal stress.•The efficiency of Ge buffered flexible CZTSSe solar cell got an increase of 200%. Flexible CZTSSe thin film solar cells were prepared on Ti foil substrate. With adding a Ge buffer layer between the Ti foil substrate and the Mo back contact, CZTSSe thin film showed a better crystallization and less secondary phases. It was confirmed that Ge diffused into CZTSSe layer and had a promoting effect on Sn+4 state formation and stress release. The flexible CZTSSe solar cell with Ge buffer layer showed a conversion efficiency of 2.00%, which presented a 200% enhancement comparing to the solar cell without Ge buffer layer.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2016.12.106