Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory

•SET/RESET speed of 10ns was obtained with large sensing margin.•The reflectivity ratio of Sb2Te3-SiC is large enough for application.•The role of SiC in suppressing crystallization was proved by XRD, and TEM results. In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance...

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Bibliographic Details
Published in:Materials letters 2017-08, Vol.201, p.109-113
Main Authors: Meng, Yun, Wu, Liangcai, Song, Zhitang, Wen, Shuai, Jiang, Minghui, Wei, Jingsong, Wang, Yang
Format: Article
Language:English
Subjects:
Computer memory
Diffraction
Doping
Electrical properties
Electron microscopy
Femtosecond pulses
Grain size
Large reflectivity ratio
Materials science
Nano-composite
Nanomaterials
Optical properties
Phase change materials
Rapid transition
Silicon carbide
Thin film
Transmission electron microscopy
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Summary:•SET/RESET speed of 10ns was obtained with large sensing margin.•The reflectivity ratio of Sb2Te3-SiC is large enough for application.•The role of SiC in suppressing crystallization was proved by XRD, and TEM results. In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10ns electric pulse, indicating its excellent electrical properties. Furthermore, femtosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2017.05.003