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The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

•La-doped bismuth titanate (BLT) thin films were grown on Si substrates using ZnO buffer layers.•ZnO buffer layer facilitates the formation of non-c-axis-oriented microstructure.•BLT films with non-c-axis-oriented grains shows stronger ferroelectric domain switching. Lanthanum-doped bismuth titanate...

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Bibliographic Details
Published in:Materials letters 2017-11, Vol.206, p.117-120
Main Authors: Coathup, David, Li, Zheng, Zhu, Xiaojing, Ye, Haitao
Format: Article
Language:English
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Summary:•La-doped bismuth titanate (BLT) thin films were grown on Si substrates using ZnO buffer layers.•ZnO buffer layer facilitates the formation of non-c-axis-oriented microstructure.•BLT films with non-c-axis-oriented grains shows stronger ferroelectric domain switching. Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (117), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2017.06.112