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Dielectric Measurements on Sol–Gel Derived Titania Films

Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol–gel derived anatase titania films on ultrasonically cleaned (100) p -silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-depende...

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Bibliographic Details
Published in:Journal of electronic materials 2017-11, Vol.46 (11), p.6646-6652
Main Authors: Capan, Rifat, Ray, Asim K.
Format: Article
Language:English
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Summary:Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol–gel derived anatase titania films on ultrasonically cleaned (100) p -silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity σ ac ( f ,  T ) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 × 10 −11  m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-017-5670-y