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Dielectric Measurements on Sol–Gel Derived Titania Films
Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol–gel derived anatase titania films on ultrasonically cleaned (100) p -silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-depende...
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Published in: | Journal of electronic materials 2017-11, Vol.46 (11), p.6646-6652 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol–gel derived anatase titania films on ultrasonically cleaned (100)
p
-silicon substrates at temperatures
T
ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity
σ
ac
(
f
,
T
) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 × 10
−11
m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-017-5670-y |