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Defect formation and the water-gas shift reaction on [beta]-Ga2O3
The water-gas shift reaction was studied in either direction on [beta]-Ga2O3 samples with different surface chemistries: a fully oxidized surface, a hydrogen-pretreated surface with and without oxygen vacancies present, and an oxygen-defective surface without adsorbed hydrogen. The samples were char...
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Published in: | Journal of catalysis 2008-06, Vol.256 (2), p.278 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The water-gas shift reaction was studied in either direction on [beta]-Ga2O3 samples with different surface chemistries: a fully oxidized surface, a hydrogen-pretreated surface with and without oxygen vacancies present, and an oxygen-defective surface without adsorbed hydrogen. The samples were characterized by volumetric adsorption measurements and temperature-programmed desorption and reaction techniques. The reaction in both directions was observed to follow two parallel mechanistic pathways, namely formate- and oxygen vacancy-assisted mechanisms, with relative rate contributions depending on temperature and sample pretreatment. [PUBLICATION ABSTRACT] |
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ISSN: | 0021-9517 1090-2694 |
DOI: | 10.1016/j.jcat.2008.03.018 |