Retention Model of TaO/HfO^sub x^ and TaO/AlO^sub x^ RRAM with Self-Rectifying Switch Characteristics

A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because t...

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Bibliographic Details
Published in:Nanoscale research letters 2017-06, Vol.12 (1), p.1
Main Authors: Lin, Yu-de, Chen, Pang-shiu, Lee, Heng-yuan, Chen, Yu-sheng, Rahaman, Sk Ziaur, Tsai, Kan-hsueh, Hsu, Chien-hua, Chen, Wei-su, Wang, Pei-hua, King, Ya-chin, Lin, Chrong Jung
Format: Article
Language:English
Subjects:
Diffusion barriers
Diffusion layers
Energy levels
High resistance
Low resistance
Retention
Retention time
Switching
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Summary:A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-017-2179-5