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10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization such as external quantum efficiency, light and dark I-V measurements, is pe...

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Published in:Solar energy materials and solar cells 2017-01, Vol.159, p.576-582
Main Authors: Ochoa, M., Yaccuzzi, E., Espinet-González, P., Barrera, M., Barrigón, E., Ibarra, M.L., Contreras, Yedileth, García, J., López, E., Alurralde, M., Algora, C., Godfrin, E., Rey-Stolle, I., Plá, J.
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Language:English
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Summary:In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization such as external quantum efficiency, light and dark I-V measurements, is performed together with theoretical device modeling in order to guide the analysis of the degradation behavior. The GaInP (on Ge) and Ge cell showed a power loss between beginning of life and end of life of about 4% while the GaInP/GaAs/Ge and GaAs solar cells exhibited the highest damage measured of 12% and 10%, respectively for an irradiation fluence equivalent to an 8-years satellite mission in Low Earth Orbit. The results from single-junction solar cells correlate well with those of triple-junction solar cells. The performance of concentrator solar cells structures is similar to that of traditional space-targeted designs reported in literature suggesting that no special changes may be required to use triple junction concentrator solar cells in space.
ISSN:0927-0248
DOI:10.1016/j.solmat.2016.09.042