Fabrication and characterization of high performance MSM UV photodetector based on NiO film

•NiO film was grown on Si(100) substrate through RF sputtering technique.•The film indicated (200) preferred orientation with a band gap of 3.38eV.•The Au/NiO/Au MSM UV device displayed high current gain and sensitivty.•The rise and fall time of the device were 0.26s and 0.20s respectively. In this...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2017-08, Vol.262, p.78-86
Main Authors: Ahmed, Anas A., Devarajan, Mutharasu, Afzal, Naveed
Format: Article
Language:English
Subjects:
Band gap
Gold
Magnetron sputtering
MSM UV detector
Nickel oxides
NiO
Photodetection characteristics
Photometers
Preferred orientation
Reflectance
RF sputtering
Sensors
Silicon substrates
Spectral sensitivity
Substrates
Thin film
Thin films
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Summary:•NiO film was grown on Si(100) substrate through RF sputtering technique.•The film indicated (200) preferred orientation with a band gap of 3.38eV.•The Au/NiO/Au MSM UV device displayed high current gain and sensitivty.•The rise and fall time of the device were 0.26s and 0.20s respectively. In this study, metal-semiconductor-metal (MSM) ultraviolet photodetector based on NiO film was fabricated on n-type Si (100) substrate. The NiO film was deposited on Si (100) by using RF magnetron sputtering of NiO target at 100°C. The film showed cubic bunsenite structure with (200) preferred orientation as confirmed through XRD analysis. The band gap of NiO film was evaluated from UV–vis reflectance specroscopy and it was found to be 3.38eV. To study the photodetection performance of NiO film, Au metal contacts were deposited on the film through RF sputtering system. The photodetection characteristics of the photodetector such as spectral response, photosensivity, internal gain, rise and fall time were investigated. The Au/NiO/Au MSM UV device displayed maximum value of responsivity (4.5A/W) upon exposure to 365nm UV light at 5V bias. The photosensivity was calculated to be 6.4×103% whereas the internal gain of the photodetector was estimated to be 6.5×101. In addition, the rising and falling time were found to be 266ms and 200ms, respectively. The fabricated device exhibited excellent stability and repeatability in its performance.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2017.05.028