Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

• Published in: Journal of materials science. Materials in electronics 2017-12, Vol.28 (23), p.18244-18253
• Main Authors: Patil, Rhishikesh Mahadev, Nagapure, Dipak Ramdas, Mary, G. Swapna, Chandra, G. Hema, Sunil, M. Anantha, Subbaiah, Y. P. Venkata, Prathap, P., Gupta, Mukul, Rao, R. Prasada
• Format: Article
• Language: English
• Subjects: Carrier density; Characterization and Evaluation of Materials; Chemistry and Materials Science; Copper zinc tin selenide; Crystal lattices; Crystal structure; Crystallization; Diffraction; Electrical resistivity; Electron micrographs; Electron mobility; Energy measurement; Hall effect; Ions; Lattice parameters; Low temperature; Materials Science; Optical and Electronic Materials; Photomicrographs; Physical properties; Precursors; Raman spectra; Secondary ion mass spectroscopy; Stacks; Thin films; X ray analysis
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-017-7773-x

In the present paper, a novel process for synthesis of Cu 2 ZnSnSe 4 thin films via low temperature selenization (350 °C) of multiple stacks of binary selenides has been reported. Further, the influence of selenization temperature (250–450 °C) on the physical properties of Cu 2 ZnSnSe 4 thin films was studied and discussed herein. The Rietveld refinement from X-ray diffraction data of Cu 2 ZnSnSe 4 films grown at a selenization temperature of 350 °C was found to be single phase with kesterite type crystal structure and having lattice parameters a  = 5.695 Å, c  = 11.334 Å. Raman spectra recorded using multi excitation wavelength sources under non-resonant and near resonant conditions confirms the formation of single phase Cu 2 ZnSnSe 4 films. Secondary ion mass spectroscopic (SIMS) analysis demonstrated that composition of elements across the thickness is fairly uniform. Energy dispersive X-ray analysis measurement reveals that the obtained films are Cu-poor and Zn-rich. The scanning electron micrographs of binary selenide stacks selenized at a temperature of 350 °C shows randomly oriented cylindrical grains. The optical absorption studies indicated a direct band gap of 1.01 eV. The films showed p -type conductivity with electrical resistivity of 4.66 Ω cm, Hall mobility of 15.17 cm 2 (Vs) −1 and carrier concentration of 8.82 × 10 16  cm −3 .