Loading…
Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics
2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits...
Saved in:
Published in: | Advanced functional materials 2017-11, Vol.27 (41), p.n/a |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | |
container_end_page | n/a |
container_issue | 41 |
container_start_page | |
container_title | Advanced functional materials |
container_volume | 27 |
creator | Dai, Zhenyu Wang, Zhenwei He, Xin Zhang, Xi‐Xiang Alshareef, Husam N. |
description | 2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large‐area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band‐offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible‐range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.
Transparent, conducting aluminum‐doped zinc oxide (AZO) is optimized and used, for the first time, as contact material to fabricate fully transparent circuits based on 2D monolayer molybdenum disulfide (MoS2). The circuits show a high visible‐range transmittance of 85%. The transistors, rectifiers, and inverters show competitive performance to 2D devices that use opaque Si substrates and metal contacts. |
doi_str_mv | 10.1002/adfm.201703119 |
format | article |
fullrecord | <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_journals_1958735836</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1958735836</sourcerecordid><originalsourceid>FETCH-LOGICAL-p2339-f0406ebff82eed2e2341e3154fca9c20bf3d7f222c1c32d9823e72ed7f25d8a3</originalsourceid><addsrcrecordid>eNpVkE1LAzEQhhdRsFavngOeq_nYz2PZtiq09GARbyFNJm3KdrMmWWoPgj_B3-gvsUul4GlmXp6ZgSeKbgm-JxjTB6H09p5ikmFGSHEW9UhK0gHDND8_9eTtMrryfoMPWMbiXvQ5FW4FP1_fQwcClWvYGikq9Coa69AIGutNAIVm9oWinQlrtHCi9o1wUAdU2lq1Mph6heYfRkEXBCGDR8HuhFNo0lbV_t8KHaFxBTI4Wxvpr6MLLSoPN3-1Hy0m40X5NJjOH5_L4XTQUMaKgcYxTmGpdU4BFAXKYgKMJLGWopAULzVTmaaUSiIZVUVOGWQUuixRuWD96O54tnH2vQUf-Ma2rj585KRI8owlOUsPVHGkdqaCPW-c2Qq35wTzTi_v9PKTXj4cTWanif0Ca0Fzaw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1958735836</pqid></control><display><type>article</type><title>Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics</title><source>Wiley</source><creator>Dai, Zhenyu ; Wang, Zhenwei ; He, Xin ; Zhang, Xi‐Xiang ; Alshareef, Husam N.</creator><creatorcontrib>Dai, Zhenyu ; Wang, Zhenwei ; He, Xin ; Zhang, Xi‐Xiang ; Alshareef, Husam N.</creatorcontrib><description>2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large‐area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band‐offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible‐range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.
Transparent, conducting aluminum‐doped zinc oxide (AZO) is optimized and used, for the first time, as contact material to fabricate fully transparent circuits based on 2D monolayer molybdenum disulfide (MoS2). The circuits show a high visible‐range transmittance of 85%. The transistors, rectifiers, and inverters show competitive performance to 2D devices that use opaque Si substrates and metal contacts.</description><identifier>ISSN: 1616-301X</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201703119</identifier><language>eng</language><publisher>Hoboken: Wiley Subscription Services, Inc</publisher><subject>2D materials ; Aluminum ; Atomic layer epitaxy ; Chemical vapor deposition ; Conduction ; Conductors ; Electronic devices ; Electronics ; Materials science ; Molybdenum disulfide ; Monolayers ; Offsets ; Photonics ; Semiconductor devices ; Semiconductors ; Switching ; thin‐film transistors ; Threshold voltage ; Transistors ; transparent electronics ; Zinc oxide</subject><ispartof>Advanced functional materials, 2017-11, Vol.27 (41), p.n/a</ispartof><rights>2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-5029-2142</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Dai, Zhenyu</creatorcontrib><creatorcontrib>Wang, Zhenwei</creatorcontrib><creatorcontrib>He, Xin</creatorcontrib><creatorcontrib>Zhang, Xi‐Xiang</creatorcontrib><creatorcontrib>Alshareef, Husam N.</creatorcontrib><title>Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics</title><title>Advanced functional materials</title><description>2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large‐area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band‐offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible‐range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.
Transparent, conducting aluminum‐doped zinc oxide (AZO) is optimized and used, for the first time, as contact material to fabricate fully transparent circuits based on 2D monolayer molybdenum disulfide (MoS2). The circuits show a high visible‐range transmittance of 85%. The transistors, rectifiers, and inverters show competitive performance to 2D devices that use opaque Si substrates and metal contacts.</description><subject>2D materials</subject><subject>Aluminum</subject><subject>Atomic layer epitaxy</subject><subject>Chemical vapor deposition</subject><subject>Conduction</subject><subject>Conductors</subject><subject>Electronic devices</subject><subject>Electronics</subject><subject>Materials science</subject><subject>Molybdenum disulfide</subject><subject>Monolayers</subject><subject>Offsets</subject><subject>Photonics</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Switching</subject><subject>thin‐film transistors</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>transparent electronics</subject><subject>Zinc oxide</subject><issn>1616-301X</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpVkE1LAzEQhhdRsFavngOeq_nYz2PZtiq09GARbyFNJm3KdrMmWWoPgj_B3-gvsUul4GlmXp6ZgSeKbgm-JxjTB6H09p5ikmFGSHEW9UhK0gHDND8_9eTtMrryfoMPWMbiXvQ5FW4FP1_fQwcClWvYGikq9Coa69AIGutNAIVm9oWinQlrtHCi9o1wUAdU2lq1Mph6heYfRkEXBCGDR8HuhFNo0lbV_t8KHaFxBTI4Wxvpr6MLLSoPN3-1Hy0m40X5NJjOH5_L4XTQUMaKgcYxTmGpdU4BFAXKYgKMJLGWopAULzVTmaaUSiIZVUVOGWQUuixRuWD96O54tnH2vQUf-Ma2rj585KRI8owlOUsPVHGkdqaCPW-c2Qq35wTzTi_v9PKTXj4cTWanif0Ca0Fzaw</recordid><startdate>20171103</startdate><enddate>20171103</enddate><creator>Dai, Zhenyu</creator><creator>Wang, Zhenwei</creator><creator>He, Xin</creator><creator>Zhang, Xi‐Xiang</creator><creator>Alshareef, Husam N.</creator><general>Wiley Subscription Services, Inc</general><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5029-2142</orcidid></search><sort><creationdate>20171103</creationdate><title>Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics</title><author>Dai, Zhenyu ; Wang, Zhenwei ; He, Xin ; Zhang, Xi‐Xiang ; Alshareef, Husam N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2339-f0406ebff82eed2e2341e3154fca9c20bf3d7f222c1c32d9823e72ed7f25d8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>2D materials</topic><topic>Aluminum</topic><topic>Atomic layer epitaxy</topic><topic>Chemical vapor deposition</topic><topic>Conduction</topic><topic>Conductors</topic><topic>Electronic devices</topic><topic>Electronics</topic><topic>Materials science</topic><topic>Molybdenum disulfide</topic><topic>Monolayers</topic><topic>Offsets</topic><topic>Photonics</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Switching</topic><topic>thin‐film transistors</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>transparent electronics</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dai, Zhenyu</creatorcontrib><creatorcontrib>Wang, Zhenwei</creatorcontrib><creatorcontrib>He, Xin</creatorcontrib><creatorcontrib>Zhang, Xi‐Xiang</creatorcontrib><creatorcontrib>Alshareef, Husam N.</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dai, Zhenyu</au><au>Wang, Zhenwei</au><au>He, Xin</au><au>Zhang, Xi‐Xiang</au><au>Alshareef, Husam N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics</atitle><jtitle>Advanced functional materials</jtitle><date>2017-11-03</date><risdate>2017</risdate><volume>27</volume><issue>41</issue><epage>n/a</epage><issn>1616-301X</issn><eissn>1616-3028</eissn><abstract>2D semiconductors are poised to revolutionize the future of electronics and photonics, much like transparent oxide conductors and semiconductors have revolutionized the display industry. Herein, these two types of materials are combined to realize fully transparent 2D electronic devices and circuits. Specifically, a large‐area chemical vapor deposition process is developed to grow monolayer MoS2 continuous films, which are, for the first time, combined with transparent conducting oxide (TCO) contacts. Transparent conducting aluminum doped zinc oxide contacts are deposited by atomic layer deposition, with composition tuning to achieve optimal conductivity and band‐offsets with MoS2. The optimized process gives fully transparent TCO/MoS2 2D electronics with average visible‐range transmittance of 85%. The transistors show high mobility (4.2 cm2 V−1 s−1), fast switching speed (0.114 V dec−1), very low threshold voltage (0.69 V), and large switching ratio (4 × 108). To our knowledge, these are the lowest threshold voltage and subthreshold swing values reported for monolayer chemical vapor deposition MoS2 transistors. The transparent inverters show fast switching properties with a gain of 155 at a supply voltage of 10 V. The results demonstrate that transparent conducting oxides can be used as contact materials for 2D semiconductors, which opens new possibilities in 2D electronic and photonic applications.
Transparent, conducting aluminum‐doped zinc oxide (AZO) is optimized and used, for the first time, as contact material to fabricate fully transparent circuits based on 2D monolayer molybdenum disulfide (MoS2). The circuits show a high visible‐range transmittance of 85%. The transistors, rectifiers, and inverters show competitive performance to 2D devices that use opaque Si substrates and metal contacts.</abstract><cop>Hoboken</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/adfm.201703119</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-5029-2142</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1616-301X |
ispartof | Advanced functional materials, 2017-11, Vol.27 (41), p.n/a |
issn | 1616-301X 1616-3028 |
language | eng |
recordid | cdi_proquest_journals_1958735836 |
source | Wiley |
subjects | 2D materials Aluminum Atomic layer epitaxy Chemical vapor deposition Conduction Conductors Electronic devices Electronics Materials science Molybdenum disulfide Monolayers Offsets Photonics Semiconductor devices Semiconductors Switching thin‐film transistors Threshold voltage Transistors transparent electronics Zinc oxide |
title | Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T15%3A11%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Large%E2%80%90Area%20Chemical%20Vapor%20Deposited%20MoS2%20with%20Transparent%20Conducting%20Oxide%20Contacts%20toward%20Fully%20Transparent%202D%20Electronics&rft.jtitle=Advanced%20functional%20materials&rft.au=Dai,%20Zhenyu&rft.date=2017-11-03&rft.volume=27&rft.issue=41&rft.epage=n/a&rft.issn=1616-301X&rft.eissn=1616-3028&rft_id=info:doi/10.1002/adfm.201703119&rft_dat=%3Cproquest_wiley%3E1958735836%3C/proquest_wiley%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p2339-f0406ebff82eed2e2341e3154fca9c20bf3d7f222c1c32d9823e72ed7f25d8a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1958735836&rft_id=info:pmid/&rfr_iscdi=true |