Properties of transparent conducting quaternary silver indium tin oxide thin films crystallized with delafossite structure

A study on crystalline silver indium tin oxide (AISO), a quaternary compound formed by tin incorporation in delafossite AgInO2 is briefed here. X-ray diffraction for structural characterization combined with energy dispersive analysis of X-rays for composition assessment confirms the formation of cr...

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Bibliographic Details
Published in:Materials chemistry and physics 2017-09, Vol.199, p.591-596
Main Authors: Keerthi, K., Nair, Bindu G., Benoy, M.D., Raphael, Rakhy, Philip, Rachel Reena
Format: Article
Language:English
Subjects:
Band gap
Bandgap tuning
Carrier density
Crystal structure
Crystallinity
Crystallite orientation
Crystallization
Delafossite
Electrical resistivity
Indium tin oxides
Structural analysis
Substrates
Thin films
Thinfilms
X-ray diffraction
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Summary:A study on crystalline silver indium tin oxide (AISO), a quaternary compound formed by tin incorporation in delafossite AgInO2 is briefed here. X-ray diffraction for structural characterization combined with energy dispersive analysis of X-rays for composition assessment confirms the formation of crystalline thin films with the rhomb-centered rhombohedral delafossite crystalline lattice. The variation in electrical conductivity (101–102 S/cm) and activation energy are correlated with carrier concentration and c-axis orientation induced by stoichiometric changes. A band gap tuning from 2.38 eV to 3.23 eV is achieved by the stoichiometry changes. •The lowest substrate temperature for crystallization of AISO reported till date.•Variations in electrical conductivity is related with the crystallite orientation.•Tuning of band gap is obtained by varying the silver content in the AISO films.•Sn incorporated AIO films are found to have better electrical conductivity.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2017.07.058