Photoconductivity relaxation processes in AgCd2GaS4 single crystals

Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of th...

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Bibliographic Details
Published in:Materials chemistry and physics 2017-10, Vol.200, p.250-256
Main Authors: Myronchuk, G.L., Piasecki, M., Krymus, A.S., Kityk, I.V., Vlokh, R.O., Fedorchuk, A.O., Kozer, V.R., Parasyuk, O.V.
Format: Article
Language:English
Subjects:
Adhesion
Ambient temperature
Band gap
Bridgman technique
Carrier relaxation
Conductivity
Energy gap
Photoconductivity
Photoelectricity
Silver compounds
Single crystal growth
Single crystals
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Summary:Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd2GaS4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV. •Optical and photoelectric properties of AgCd2GaS4 single crystal were explored.•Temperature dependence of the time kinetics was investigated.•AgCd2GaS4 single crystals was grown by Bridgman-Stockbarger method.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2017.07.053