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Photoconductivity relaxation processes in AgCd2GaS4 single crystals
Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of th...
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| Published in: | Materials chemistry and physics 2017-10, Vol.200, p.250-256 |
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| Main Authors: | , , , , , , , |
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| Language: | English |
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| container_end_page | 256 |
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| container_title | Materials chemistry and physics |
| container_volume | 200 |
| creator | Myronchuk, G.L. Piasecki, M. Krymus, A.S. Kityk, I.V. Vlokh, R.O. Fedorchuk, A.O. Kozer, V.R. Parasyuk, O.V. |
| description | Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd2GaS4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV.
•Optical and photoelectric properties of AgCd2GaS4 single crystal were explored.•Temperature dependence of the time kinetics was investigated.•AgCd2GaS4 single crystals was grown by Bridgman-Stockbarger method. |
| doi_str_mv | 10.1016/j.matchemphys.2017.07.053 |
| format | article |
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•Optical and photoelectric properties of AgCd2GaS4 single crystal were explored.•Temperature dependence of the time kinetics was investigated.•AgCd2GaS4 single crystals was grown by Bridgman-Stockbarger method.</description><identifier>ISSN: 0254-0584</identifier><identifier>EISSN: 1879-3312</identifier><identifier>DOI: 10.1016/j.matchemphys.2017.07.053</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Adhesion ; Ambient temperature ; Band gap ; Bridgman technique ; Carrier relaxation ; Conductivity ; Energy gap ; Photoconductivity ; Photoelectricity ; Silver compounds ; Single crystal growth ; Single crystals</subject><ispartof>Materials chemistry and physics, 2017-10, Vol.200, p.250-256</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 1, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-1040-8811 ; 0000-0001-7071-3899</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Myronchuk, G.L.</creatorcontrib><creatorcontrib>Piasecki, M.</creatorcontrib><creatorcontrib>Krymus, A.S.</creatorcontrib><creatorcontrib>Kityk, I.V.</creatorcontrib><creatorcontrib>Vlokh, R.O.</creatorcontrib><creatorcontrib>Fedorchuk, A.O.</creatorcontrib><creatorcontrib>Kozer, V.R.</creatorcontrib><creatorcontrib>Parasyuk, O.V.</creatorcontrib><title>Photoconductivity relaxation processes in AgCd2GaS4 single crystals</title><title>Materials chemistry and physics</title><description>Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd2GaS4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV.
•Optical and photoelectric properties of AgCd2GaS4 single crystal were explored.•Temperature dependence of the time kinetics was investigated.•AgCd2GaS4 single crystals was grown by Bridgman-Stockbarger method.</description><subject>Adhesion</subject><subject>Ambient temperature</subject><subject>Band gap</subject><subject>Bridgman technique</subject><subject>Carrier relaxation</subject><subject>Conductivity</subject><subject>Energy gap</subject><subject>Photoconductivity</subject><subject>Photoelectricity</subject><subject>Silver compounds</subject><subject>Single crystal growth</subject><subject>Single crystals</subject><issn>0254-0584</issn><issn>1879-3312</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNpNkF1LwzAUhoMoOKf_oeJ1a76appej6BQGCu4-ZMnpmtI1s8mG-_dmzAvhhffm4ZyXB6FHgguCiXjui52OpoPdvjuFgmJSFTilZFdoRmRV54wReo1mmJY8x6Xkt-guhB4nkBA2Q81n56M3frQHE93RxVM2waB_dHR-zPaTNxAChMyN2WLbWLrUXzwLbtwOkJnpFKIewj26aVPBw1_P0fr1Zd285auP5XuzWOVAOYu5rSQzLcabSmtpRF1ptjGtrA0wsaGm5UJIsNBqymlLCROEcyxtRanmrJZsjp4uZ9Oq7wOEqHp_mMb0UZFa4ERIIRLVXChIS44OJhWMg9GAdROYqKx3imB1lqd69U-eOstTOKVk7BfzzmgL</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Myronchuk, G.L.</creator><creator>Piasecki, M.</creator><creator>Krymus, A.S.</creator><creator>Kityk, I.V.</creator><creator>Vlokh, R.O.</creator><creator>Fedorchuk, A.O.</creator><creator>Kozer, V.R.</creator><creator>Parasyuk, O.V.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1040-8811</orcidid><orcidid>https://orcid.org/0000-0001-7071-3899</orcidid></search><sort><creationdate>20171001</creationdate><title>Photoconductivity relaxation processes in AgCd2GaS4 single crystals</title><author>Myronchuk, G.L. ; Piasecki, M. ; Krymus, A.S. ; Kityk, I.V. ; Vlokh, R.O. ; Fedorchuk, A.O. ; Kozer, V.R. ; Parasyuk, O.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e243t-d783cf00b7aa8c697a3bcf89ce36b2cf4668edefa242f213614408d722a43983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Adhesion</topic><topic>Ambient temperature</topic><topic>Band gap</topic><topic>Bridgman technique</topic><topic>Carrier relaxation</topic><topic>Conductivity</topic><topic>Energy gap</topic><topic>Photoconductivity</topic><topic>Photoelectricity</topic><topic>Silver compounds</topic><topic>Single crystal growth</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Myronchuk, G.L.</creatorcontrib><creatorcontrib>Piasecki, M.</creatorcontrib><creatorcontrib>Krymus, A.S.</creatorcontrib><creatorcontrib>Kityk, I.V.</creatorcontrib><creatorcontrib>Vlokh, R.O.</creatorcontrib><creatorcontrib>Fedorchuk, A.O.</creatorcontrib><creatorcontrib>Kozer, V.R.</creatorcontrib><creatorcontrib>Parasyuk, O.V.</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials chemistry and physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Myronchuk, G.L.</au><au>Piasecki, M.</au><au>Krymus, A.S.</au><au>Kityk, I.V.</au><au>Vlokh, R.O.</au><au>Fedorchuk, A.O.</au><au>Kozer, V.R.</au><au>Parasyuk, O.V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoconductivity relaxation processes in AgCd2GaS4 single crystals</atitle><jtitle>Materials chemistry and physics</jtitle><date>2017-10-01</date><risdate>2017</risdate><volume>200</volume><spage>250</spage><epage>256</epage><pages>250-256</pages><issn>0254-0584</issn><eissn>1879-3312</eissn><abstract>Optical and photoelectric spectral features of AgCd2GaS4 single crystal were explored. Optical band gap energy was estimated from the absorption and was varied within 2.18–2.28 eV (at ambient temperature) for the samples cut from different parts of the single-crystalline specimens. The results of the photoconductivity relaxation study within the temperature range 100–280 K were explored within a framework of the adhesion trapping level model. It was established that the AgCd2GaS4 crystals exhibit long-term relaxation of photoconductivity with adhesion levels at energies about 0.2 eV.
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| fulltext | fulltext |
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| ispartof | Materials chemistry and physics, 2017-10, Vol.200, p.250-256 |
| issn | 0254-0584 1879-3312 |
| language | eng |
| recordid | cdi_proquest_journals_1960983866 |
| source | ScienceDirect Journals |
| subjects | Adhesion Ambient temperature Band gap Bridgman technique Carrier relaxation Conductivity Energy gap Photoconductivity Photoelectricity Silver compounds Single crystal growth Single crystals |
| title | Photoconductivity relaxation processes in AgCd2GaS4 single crystals |
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