Tuning the properties of tin oxide thin films for device fabrications

Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500  ∘ C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were a...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2017-11, Vol.90 (11), p.1-6, Article 219
Main Authors: Sudha, A., Sharma, S. L., Gupta, A. N., Sharma, S. D.
Format: Article
Language:English
Subjects:
Annealing furnaces
Band gap
Complex Systems
Condensed Matter Physics
Dosimeters
Electron microscopy
Energy gap
Fluid- and Aerodynamics
Furnaces
Gamma irradiation
Gamma rays
Movies
Physics
Physics and Astronomy
Radiation (Physics)
Radiation effects
Regular Article
Silicon
Solid State Physics
Substrates
Thin films
Tin oxides
Ultraviolet-visible spectroscopy
X-ray diffraction
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Summary:Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500  ∘ C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using 60 Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV–vis spectroscopy and I – V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2017-80139-y