The Influence of a TiN Film on the Electronic Contribution to the Thermal Conductivity of a TiC Film in a TiN-TiC Layer System

TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determin...

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Bibliographic Details
Published in:Metallurgical and materials transactions. A, Physical metallurgy and materials science Physical metallurgy and materials science, 2018, Vol.49 (1), p.346-355
Main Author: Jagannadham, K.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electron microscopy
Heat conductivity
Heat transfer
Interdiffusion
Magnetron sputtering
Materials Science
Metallic Materials
Metallurgy
Microscopy
Nanotechnology
Reflectance
Resistance
Silicon substrates
Structural Materials
Surfaces and Interfaces
Thermal conductivity
Thin Films
Titanium nitride
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Summary:TiC and TiN films were deposited by reactive magnetron sputtering on Si substrates. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterization of the microstructure and interface structure have been carried out and the stoichiometric composition of TiC is determined. Thermal conductivity and interface thermal conductance between different layers in the films are evaluated by the transient thermo reflectance (TTR) and three-omega (3- ω ) methods. The results showed that the thermal conductivity of the TiC films increased with temperature. The thermal conductivity of TiC in the absence of TiN is dominated by phonon contribution. The electronic contribution to the thermal conductivity of TiC in the presence of TiN is found to be more significant. The interface thermal conductance of the TiC/TiN interface is much larger than that of interfaces at Au/TiC, TiC/Si, or TiN/Si. The interface thermal conductance between TiC and TiN is reduced by the layer formed as a result of interdiffusion.
ISSN:1073-5623
1543-1940
DOI:10.1007/s11661-017-4401-6