Impact of titanium ions in the hexagonal nanostructured ZnO thin films

ZnO thin films containing different ratios of Ti metal were prepared by the DC/RF sputtering technique. XPS analysis showed the presence of Ti content in the range from 0.9 to 1.5 at.%, and Ti was existed as Ti 4+ states. Zincite phase has been detected by XRD technique through all samples and the c...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018-02, Vol.29 (4), p.3056-3065
Main Authors: Abdel-wahab, M. Sh, Jilani, Asim, Alshahrie, A., Hammad, Ahmed H.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Band gap
Characterization and Evaluation of Materials
Chemistry and Materials Science
Dislocation density
Grain boundaries
Materials Science
Optical and Electronic Materials
Photoluminescence
Thin films
Titanium
Valence band
X ray photoelectron spectroscopy
Zinc oxide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:ZnO thin films containing different ratios of Ti metal were prepared by the DC/RF sputtering technique. XPS analysis showed the presence of Ti content in the range from 0.9 to 1.5 at.%, and Ti was existed as Ti 4+ states. Zincite phase has been detected by XRD technique through all samples and the crystallite size, the strain, and the dislocation density were estimated. Surface morphology and roughness were examined by atomic force microscopy. Optical absorbance and optical band gap were measured and determined. The optical band gap is proposed to be direct and varied from 3.25 to 3.282 eV as the Ti content increase. Photoluminescence properties show a highly intense peak at 412 nm related to the transition from shallow donor level to valence band comes from the interface traps through the grain boundaries.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-8237-z