Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

• Published in: Journal of electronic materials 2018-02, Vol.47 (2), p.910-916
• Main Authors: Marx, M., Grundmann, A., Lin, Y.-R., Andrzejewski, D., Kümmell, T., Bacher, G., Heuken, M., Kalisch, H., Vescan, A.
• Format: Article
• Language: English
• Subjects: 59th Electronic Materials Conference 2017; Atomic force microscopy; Atomic structure; Characterization and Evaluation of Materials; Chemistry and Materials Science; Deposition; Electron microscopy; Electronics and Microelectronics; Epitaxial growth; Instrumentation; Materials research; Materials Science; Metalorganic chemical vapor deposition; Microscopy; Molybdenum disulfide; Optical and Electronic Materials; Sapphire; Solid State Physics; Topical Collection: 59th Electronic Materials Conference 2017
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-017-5937-3

The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS 2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl and di- tert -butyl sulfide as metalorganic precursors in a horizontal hot-wall MOVPE reactor from AIXTRON. The structural properties of the MoS 2 films were analyzed by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. It was found that a substrate prebake step prior to growth reduced the nucleation density of the polycrystalline film. Simultaneously, the size of the MoS 2 domains increased and the formation of parasitic carbonaceous film was suppressed. Additionally, the influence of growth parameters such as reactor pressure and surface temperature is discussed. An upper limit for these parameters was found, beyond which strong parasitic deposition or incorporation of carbon into MoS 2 took place. This carbon contamination became significant at reactor pressure above 100 hPa and temperature above 900°C.