Gamma radiation effect on activation energy, debye temperature and exciton-phonon coupling in InGaAs/GaAs/AlGaAs(δ-Si) HEMTs

In this work, we investigate the gamma radiation effects on the optical properties of δ-Si-doping InGaAs/GaAs/AlGaAs High Electron Mobility Transistors (HEMT) grown by molecular beam epitaxy on (100) oriented GaAs substrates. Photoluminescence measurements are used to determine electron and hole rel...

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Bibliographic Details
Published in:Journal of alloys and compounds 2017-12, Vol.728, p.1165-1170
Main Authors: Daoudi, Mahmoud, Raouafi, Amel, Chtourou, Radhouane, Hosni, Faouzi
Format: Article
Language:English
Subjects:
Activation energy
Aluminum gallium arsenides
Coupling (molecular)
Crystal defects
Crystal lattices
Crystal structure
Debye temperature
Dynamic structural analysis
Epitaxial growth
Exciton-phonon coupling
Excitons
Gallium arsenide
Gamma radiation
Gamma rays
HEMT
High electron mobility transistors
Indium gallium arsenides
Molecular beam epitaxy
Optical properties
Phonons
Photoluminescence
Radiation
Radiation effects
Semiconductor devices
Substrates
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Summary:In this work, we investigate the gamma radiation effects on the optical properties of δ-Si-doping InGaAs/GaAs/AlGaAs High Electron Mobility Transistors (HEMT) grown by molecular beam epitaxy on (100) oriented GaAs substrates. Photoluminescence measurements are used to determine electron and hole relaxation process in the InGaAs/GaAs/AlGaAs (δ-Si) HEMTs. For more information about the carriers dynamics in the examined structures, we studied their interactions with the crystal lattice, defects and thermal activation through the analysis of the PL spectrum evolution depending on the temperature. With a treatment of 10 KGy the PL measurements prove a stability in activation energy and Debye temperature and a strongly affected for phonons contributions. •10 KGy gamma radiations did not affect thermal capacity and hardness of solids.•Carriers dynamics is linked to two physical mechanisms.•Gamma radiation changes the nature of phonons scattering from optics to acoustic.•Dominance of optical-phonon contributions due to indium atoms in the InGaAs alloy.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2017.09.114