HWCVD of B-doped silicon carbide thin films for SHJ solar cell technology

Boron-doped SiC thin films were deposited on N-type Si(100) substrates at various deposition conditions by means of HWCVD technology using silane (SiH 4 ), methane (CH 4 ), hydrogen(H 2 ), diborane (B 2 H 6 , 5vol.% in H 2 ) and argon (Ar) gas as precursors. Elements concentration was determined by...

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Bibliographic Details
Published in:Integrated ferroelectrics 2017-10, Vol.184 (1), p.23-31
Main Authors: Huran, Jozef, Mikolášek, Miroslav, Perný, Milan, Šály, Vladimir, Kleinová, Angela, Sasinková, Vlasta, Kobzev, Alexander P., Arbet, Juraj
Format: Article
Language:English
Subjects:
Boron carbide
Chemical vapor deposition
Diborane
Fourier transforms
HWCVD
Methane
Open circuit voltage
Photovoltaic cells
SHJ solar cell
Short circuits
SiC thin film
Silicon carbide
Silicon substrates
Silicon wafers
structural properties
Thin films
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Summary:Boron-doped SiC thin films were deposited on N-type Si(100) substrates at various deposition conditions by means of HWCVD technology using silane (SiH 4 ), methane (CH 4 ), hydrogen(H 2 ), diborane (B 2 H 6 , 5vol.% in H 2 ) and argon (Ar) gas as precursors. Elements concentration was determined by RBS and ERD method. Chemical compositions were analyzed by FTIR and Raman spectroscopy. Solar cell structure with top grid Al electrode was prepared to investigate the photovoltaic response and to gain insight about the quality of films and their suitability for photovoltaic applications. Comparison of open-circuit voltage (V OC ), short-circuit current (I sc ), fill factor (FF) and efficiency (E f ) was discussed.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2017.1368636