A simple route to deposit SiO2 film with resistivity >109ΩO·µm

Amorphous SiO2 film was deposited by the direct current pulsed magnetron sputtering technology, which the reciprocating motion was carried out onto the substrate. Without reciprocating motion, the resistivity of SiO2 film was only about 3.3x106ΩO·µm. With 500 circles reciprocating motion, the resist...

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Bibliographic Details
Published in:Materials letters 2018-01, Vol.211, p.277
Main Authors: Wang, Dengyao, Liu, Jindong, Lv, Zhixuan, Tao, Hualong, Cui, Yunxian, Wang, Hualin, Liu, Shimin, Liu, Chaoqian, Wang, Nan, Jiang, Weiwei, Chai, Weiping, Ding, Wanyu
Format: Article
Language:English
Subjects:
Atomic structure
Density
Direct current
Electrical resistivity
Electron microscopy
Magnetron sputtering
Materials science
Reciprocation
Silica
Silicon dioxide
Studies
Substrates
Transmission electron microscopy
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Summary:Amorphous SiO2 film was deposited by the direct current pulsed magnetron sputtering technology, which the reciprocating motion was carried out onto the substrate. Without reciprocating motion, the resistivity of SiO2 film was only about 3.3x106ΩO·µm. With 500 circles reciprocating motion, the resistivity increased to 1.9x109Ω·µm. Transmission electron microscopy results revealed that the straight line structure with lower local atomic density passed over SiO2 film, which deteriorated the resistivity seriously. The reciprocating motion of substrate could destroy above straight line structure to pass over SiO2 film, which kept SiO2 film with resistivity at 109ΩO·µm.
ISSN:0167-577X
1873-4979