Dielectric and Raman spectroscopy of TlSe thin films

In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr′) and dielectric loss (εr″) of TlSe thin...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2017-12, Vol.527, p.72-77
Main Authors: Ozel, Aysen E., Deger, Deniz, Celik, Sefa, Yakut, Sahin, Karabak, Binnur, Akyüz, Sevim, Ulutas, Kemal
Format: Article
Language:English
Subjects:
AC conductivity
Conductivity
Dielectric constant
Dielectric loss
Dielectric properties
Dielectric spectroscopy
Dielectrics
Permittivity
Raman spectroscopy
Thin films
TlSe
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Summary:In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr′) and dielectric loss (εr″) of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan δ) in the frequencies ranging between 10−2 Hz–107 Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the ωs law when s (s 
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2017.10.043