MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

•Producing by MBE technology of strong Topological Isolators based on HgCdTe.•Stress engineering of HgCdTe layers - 3D analogy of graphene.•The stress-free layer also shows the dominate conductivity on TPSS. Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological I...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2017-12, Vol.480, p.1-5
Main Authors: Grendysa, J., Tomaka, G., Sliz, P., Becker, C.R., Trzyna, M., Wojnarowska-Nowak, R., Bobko, E., Sheregii, E.M.
Format: Article
Language:English
Subjects:
A1.Stresses
A3. Molecular beam epitaxy
Atomic force microscopy
B1. Nanomaterials
B2. Semiconducting mercury compounds
B2. Topological insulator
Electron microscopes
Electron microscopy
Epitaxial growth
Gallium arsenide
Isolators
Molecular beam epitaxy
Morphology
Studies
Substrates
Topological insulators
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•Producing by MBE technology of strong Topological Isolators based on HgCdTe.•Stress engineering of HgCdTe layers - 3D analogy of graphene.•The stress-free layer also shows the dominate conductivity on TPSS. Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdxTe are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdxTe layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2017.10.003