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Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters

A method for mathematical simulation is used to analyze the efficiencies attainable in photovoltaic laser-power conversion at wavelengths of 1.3 and 1.55 μm in In 0.53 Ga 0.47 As/InP heterostructures with light input on the side of the n -InP substrate. The influence exerted on the efficiency by the...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016, Vol.50 (1), p.132-137
Main Authors: Emelyanov, V. M., Sorokina, S. V., Khvostikov, V. P., Shvarts, M. Z.
Format: Article
Language:English
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Summary:A method for mathematical simulation is used to analyze the efficiencies attainable in photovoltaic laser-power conversion at wavelengths of 1.3 and 1.55 μm in In 0.53 Ga 0.47 As/InP heterostructures with light input on the side of the n -InP substrate. The influence exerted on the efficiency by the parameters of the In 0.53 Ga 0.47 As/InP heterostructure and by the design of the photovoltaic laser-power converter is examined. The simulated characteristics of In 0.53 Ga 0.47 As/InP photovoltaic converters are compared with those of GaAs-based photovoltaic converters for a wavelength of 809 nm. It is shown that efficiencies of 40% at a wavelength of 1.3 μm and nearly 50% at 1.55 μm can be attained at a laser power of about 2–6 W, but the efficiency noticeably decreases at higher laser-light intensities. It is found that the main factor that hinders the achievement of a high efficiency in the conversion of high-intensity laser light is loss in the n -InP substrate. The optimal doping level of n -InP substrates to be used in the photovoltaic converters intended for varied laser-light intensities is estimated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616010097