SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method

This study uses the SiO 2 substrate passivation techniques to tune the electrical parameters of MoS 2 for analyzing the MoS 2 -SiO 2 interaction effect on the electrical conductivity of MoS 2 and the carrier transport in MoS 2 . A correlation between the temperature-dependent electrical properties a...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2017-07, Vol.28 (14), p.10106-10111
Main Authors: Lin, Yow-Jon, Su, Ting-Hong
Format: Article
Language:English
Subjects:
Carrier mobility
Carrier transport
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Electrical properties
Electrical resistivity
Hydrogen peroxide
Impurities
Materials Science
Molybdenum disulfide
Optical and Electronic Materials
Organic chemistry
Passivity
Phonons
Silicon dioxide
Substrates
Surface treatment
Temperature
Temperature dependence
Thin films
Transport phenomena
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Summary:This study uses the SiO 2 substrate passivation techniques to tune the electrical parameters of MoS 2 for analyzing the MoS 2 -SiO 2 interaction effect on the electrical conductivity of MoS 2 and the carrier transport in MoS 2 . A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS 2 thin film deposited on a SiO 2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS 2 thin film deposited on a SiO 2 substrate with H 2 O 2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS 2 thin film deposited on a SiO 2 substrate with (NH 4 ) 2 S x treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS 2 -based transistor performance.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-6772-2