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Usage of electron back scattering diffraction for investigation of buried damage layer underneath a single crystalline diamond surface
Electron back scattering diffraction was applied as attempt of control of buried damage layer under the single-crystalline diamond surface. A number of approaches for diamond polishing were developed, and clear anisotropy of wear rate for the (100), (110) and (111) planes was observed. Several cryst...
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Published in: | Journal of materials science. Materials in electronics 2017-09, Vol.28 (18), p.13464-13471 |
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container_title | Journal of materials science. Materials in electronics |
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creator | Sorokin, B. P. Bormashov, V. S. Korostilev, E. V. Novoselov, A. S. Doronin, M. A. Kravchuk, K. S. Blank, V. D. |
description | Electron back scattering diffraction was applied as attempt of control of buried damage layer under the single-crystalline diamond surface. A number of approaches for diamond polishing were developed, and clear anisotropy of wear rate for the (100), (110) and (111) planes was observed. Several crystalline orientations of synthetic and natural diamonds were investigated, and no difference of EBSD patterns between the treated and natural facets was found. A modeling experiment on the fast electron penetration into diamond was fulfilled. Since the EBSD patterns were observed at lowest energies from 2 keV, the escape depth for backscattered electrons and BDL depth could be estimated as ~10–15 nm which could be compared with a few interplanar spacings only. |
doi_str_mv | 10.1007/s10854-017-7185-y |
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A number of approaches for diamond polishing were developed, and clear anisotropy of wear rate for the (100), (110) and (111) planes was observed. Several crystalline orientations of synthetic and natural diamonds were investigated, and no difference of EBSD patterns between the treated and natural facets was found. A modeling experiment on the fast electron penetration into diamond was fulfilled. Since the EBSD patterns were observed at lowest energies from 2 keV, the escape depth for backscattered electrons and BDL depth could be estimated as ~10–15 nm which could be compared with a few interplanar spacings only.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-7185-y</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6538-459X</orcidid></addata></record> |
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subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Crystallinity Diamond polishing Diamonds Electron backscatter diffraction Electrons Materials Science Optical and Electronic Materials Planes Scattering Single crystals Wear rate |
title | Usage of electron back scattering diffraction for investigation of buried damage layer underneath a single crystalline diamond surface |
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