Analysis of sulphur deficiency defect prevalent in SILAR-CdS films

When cadmium sulphide (CdS) films are deposited using successive ionic layer adsorption and reaction (SILAR) process, a sulphur deficiency defect is always observed. The reason for this defect is addressed in the present work, by systematically analyzing the increasing pattern of Cd 2+ ions availabl...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2017-08, Vol.28 (16), p.11584-11590
Main Authors: Banu, N. Nisha, Ravichandran, K.
Format: Article
Language:English
Subjects:
Cadmium sulfide
Characterization and Evaluation of Materials
Chemistry and Materials Science
Correlation analysis
Defects
Energy consumption
Inductively coupled plasma
Ion concentration
Materials Science
Optical and Electronic Materials
Sulfur
Thickness measurement
Thin films
X ray analysis
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Summary:When cadmium sulphide (CdS) films are deposited using successive ionic layer adsorption and reaction (SILAR) process, a sulphur deficiency defect is always observed. The reason for this defect is addressed in the present work, by systematically analyzing the increasing pattern of Cd 2+ ions available in the anionic solution bath during the SILAR dipping cycles. The variation of the Cd 2+ ion concentration in the anionic solution bath with respect to the number of cycles is analyzed in detail using inductive coupled plasma (ICP) analysis. Moreover, the corresponding sulphur deficiency generated in the CdS thin films is also analyzed using the energy dispersive X-ray analysis profiles, appropriately correlated with the ICP results. The optical transmittance and the thickness measurements are carried out as supplementary studies to support the analysis on the sulphur deficiency. The obtained results may be useful for rectifying this sulfur deficiency defect which is commonly occurred in CdS films deposited using chemical bath deposition as well as SILAR methods.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-6959-6