High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423‐1523 K, whereas the 3C‐...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2018-03, Vol.101 (3), p.1048-1057
Main Authors: Sun, Qingyun, Zhu, Peipei, Xu, Qingfang, Tu, Rong, Zhang, Song, Shi, Ji, Li, Haiwen, Zhang, Lianmeng, Goto, Takashi, Yan, Jiasheng, Li, Shusen
Format: Article
Language:English
Subjects:
3C‐SiC
Chemical vapor deposition
Dilution
Epitaxial growth
heteroepitaxial growth
laser CVD
Lasers
orientation
Silicon carbide
Silicon substrates
Thick films
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Summary:3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423‐1523 K, whereas the 3C‐SiC (111) epitaxial films were obtained at 1573‐1648 K with the thickness of 5.40 to 9.32 μm. The in‐plane relationship was 3C‐SiC [‐1‐12]//Si [001] and 3C‐SiC [‐110]//Si [‐110]. The deposition rates (Rdep) were 16.2‐28.0 μm/h, which are 2 to 100 times higher than that of 3C‐SiC (111) epi‐grown on Si (111) by conventional CVD. The growth mechanism of 3C‐SiC (111) epitaxial films has also been proposed.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.15260