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Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances using SCAPS 1-D model
•We address the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances.•The proposed model is validated for both field-effect and chemical passivation using a M-I-S test structure.•We provide figures of merits without any significant loss in cell efficiencie...
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Published in: | Solar energy 2017-11, Vol.157, p.603-613 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •We address the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances.•The proposed model is validated for both field-effect and chemical passivation using a M-I-S test structure.•We provide figures of merits without any significant loss in cell efficiencies for minimum net −Qf and maximum acceptable limit for Dit.•We show the importance of rear reflectance on Jsc, while scaling down the CIGS absorber layers below 0.5μm.•We provide the optimal rear passivation layer parameters for efficiencies greater than 20% with ultra-thin CIGS thickness ( |
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ISSN: | 0038-092X 1471-1257 |
DOI: | 10.1016/j.solener.2017.08.055 |