Phase Stabilized [alpha]-CsPbI3 Perovskite Nanocrystals for Photodiode Applications

High-performance and high-reliability photodiodes are demonstrated by using [alpha]-CsPbI3 perovskite nanocrystals (NCs) phase-stabilized with a low-temperature solution-treated active layer. In addition to the high charge mobility, the high absorption coefficient, and IR-blind characteristics of th...

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Bibliographic Details
Published in:Laser & photonics reviews 2018-01, Vol.12 (1)
Main Authors: Sim, Kyu Min, Swarnkar, Abhishek, Nag, Angshuman, Chung, Dae Sung
Format: Article
Language:English
Subjects:
Absorptivity
Hysteresis
Nanocrystals
Photodiodes
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Summary:High-performance and high-reliability photodiodes are demonstrated by using [alpha]-CsPbI3 perovskite nanocrystals (NCs) phase-stabilized with a low-temperature solution-treated active layer. In addition to the high charge mobility, the high absorption coefficient, and IR-blind characteristics of the perovskite material, the defect-tolerant nature of [alpha]-CsPbI3 perovskite NCs are combined to realize hysteresis-free and high detectivity photodiodes. To further minimize interface defects originating from multi-layer photodiode construction, a poly(3-hexylthiophene) layer is strategically introduced as a passivation and electron blocking layer, resulting in a low diode ideality factor of 1.5 and a noise equivalent power of 1.6 × 10-13 W Hz-0.5. As a result, high detectivity of 1.8 × 1012 Jones is demonstrated with near-zero hysteresis. Furthermore, the optimized photodiode exhibits excellent stability under high humidity conditions owing to the intrinsic nature of the defect-tolerant [alpha]-CsPbI3 perovskite NCs.
ISSN:1863-8880
1863-8899
DOI:10.1002/lpor.201700209