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Phase Stabilized [alpha]-CsPbI3 Perovskite Nanocrystals for Photodiode Applications
High-performance and high-reliability photodiodes are demonstrated by using [alpha]-CsPbI3 perovskite nanocrystals (NCs) phase-stabilized with a low-temperature solution-treated active layer. In addition to the high charge mobility, the high absorption coefficient, and IR-blind characteristics of th...
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Published in: | Laser & photonics reviews 2018-01, Vol.12 (1) |
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description | High-performance and high-reliability photodiodes are demonstrated by using [alpha]-CsPbI3 perovskite nanocrystals (NCs) phase-stabilized with a low-temperature solution-treated active layer. In addition to the high charge mobility, the high absorption coefficient, and IR-blind characteristics of the perovskite material, the defect-tolerant nature of [alpha]-CsPbI3 perovskite NCs are combined to realize hysteresis-free and high detectivity photodiodes. To further minimize interface defects originating from multi-layer photodiode construction, a poly(3-hexylthiophene) layer is strategically introduced as a passivation and electron blocking layer, resulting in a low diode ideality factor of 1.5 and a noise equivalent power of 1.6 × 10-13 W Hz-0.5. As a result, high detectivity of 1.8 × 1012 Jones is demonstrated with near-zero hysteresis. Furthermore, the optimized photodiode exhibits excellent stability under high humidity conditions owing to the intrinsic nature of the defect-tolerant [alpha]-CsPbI3 perovskite NCs. |
doi_str_mv | 10.1002/lpor.201700209 |
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In addition to the high charge mobility, the high absorption coefficient, and IR-blind characteristics of the perovskite material, the defect-tolerant nature of [alpha]-CsPbI3 perovskite NCs are combined to realize hysteresis-free and high detectivity photodiodes. To further minimize interface defects originating from multi-layer photodiode construction, a poly(3-hexylthiophene) layer is strategically introduced as a passivation and electron blocking layer, resulting in a low diode ideality factor of 1.5 and a noise equivalent power of 1.6 × 10-13 W Hz-0.5. As a result, high detectivity of 1.8 × 1012 Jones is demonstrated with near-zero hysteresis. Furthermore, the optimized photodiode exhibits excellent stability under high humidity conditions owing to the intrinsic nature of the defect-tolerant [alpha]-CsPbI3 perovskite NCs.</description><identifier>ISSN: 1863-8880</identifier><identifier>EISSN: 1863-8899</identifier><identifier>DOI: 10.1002/lpor.201700209</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Absorptivity ; Hysteresis ; Nanocrystals ; Photodiodes</subject><ispartof>Laser & photonics reviews, 2018-01, Vol.12 (1)</ispartof><rights>Copyright © 2018 WILEY-VCH Verlag GmbH & Co. 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title | Phase Stabilized [alpha]-CsPbI3 Perovskite Nanocrystals for Photodiode Applications |
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