High‐Performance, Self‐Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction

• Published in: Advanced optical materials 2018-01, Vol.6 (2), p.n/a
• Main Authors: Lv, Quanshan, Yan, Faguang, Wei, Xia, Wang, Kaiyou
• Format: Article
• Language: English
• Subjects: GaSe; Graphene; Heterojunctions; Heterostructures; Layered materials; Materials engineering; Materials science; Optics; Optoelectronic devices; Photoelectric effect; Photoelectric emission; Response time; self‐driven photodetectors; transition metal dichalcogenides; UV–visible photodetectors; vertical vdWs heterostructure
• ISSN: 2195-1071; 2195-1071
• DOI: 10.1002/adom.201700490

Restacking the exfoliated 2D layered materials into complex heterostructures with new functionality has opened a new platform for materials engineering and device application. In this work, graphene sandwiched p‐GaSe/n‐WS2 vertical heterostructures are fabricated for photodetection. The devices show excellent performance on photodetection from ultraviolet to visible wavelength range, including high photoresponsivity (≈149 A W−1 at 410 nm), short response time of 37 µs, and self‐powered photodetection. The scanning photocurrent microscopy is also employed to investigate the photocurrent generation in the heterojunction and a significant enhancement of the photoresponse is found in the overlapping region. The results suggest that the graphene sandwiched vertical heterojunctions are promising in future novel optoelectronic devices applications. A high‐performance, self‐driven photodetector based on GaSe/WS2 heterojunction is demonstrated. The graphene sandwiched vertical heterostructure exhibits excellent performance on photodetection from ultraviolet to visible wavelength with a high photoresponsivity of 149 A W−1, rapid response of 37 µs, and self‐powered photodetection, showing great potential for future optoelectronics applications.