The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

In this paper, comparison between back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetectors (UV‐PDs) with and without an n‐AlGaN inserted layer is carried out. The results show that the introduction of n‐AlGaN interlayer significantly reduces the dark current of AlGaN‐based UV‐PDs. The mechanism...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-01, Vol.215 (2), p.n/a
Main Authors: Chen, Yiren, Zhang, Zhiwei, Li, Zhiming, Jiang, Hong, Miao, Guoqing, Song, Hang
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Dark current
Dislocations
inserted layers
Interlayers
Photometers
p‐i‐n structures
ultraviolet photodetectors
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Summary:In this paper, comparison between back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetectors (UV‐PDs) with and without an n‐AlGaN inserted layer is carried out. The results show that the introduction of n‐AlGaN interlayer significantly reduces the dark current of AlGaN‐based UV‐PDs. The mechanism involved is clarified and can be attributed to the role of n‐AlGaN interlayer which depletes to isolate the leakage paths generated by dislocations of AlGaN material. Besides, it also greatly improves the spectral performances of the p‐i‐n AlGaN‐based UV‐PDs, which can be related to the additional built‐in electric fields introduced by n‐AlGaN inserted layer that contribute to separate and transport the photon‐generated carriers. The light absorption layer with an n‐AlGaN interlayer greatly improves the performances of back‐illuminated AlGaN‐based p‐i‐n ultraviolet photodetector. The dependence of the critical voltage on the way of sweeping is dependent on the depletion level of n‐AlGaN interlayer. A complete understanding the role of the n‐AlGaN interlayer benefits to optimize the design of the back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetector.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700358