HIT Solar Cells with N-Type Low-Cost Metallurgical Si

A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensatio...

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Published in:Advances in OptoElectronics (Hindawi) 2018-01, Vol.2018, p.1-5
Main Authors: Yang, Xing, Bian, Jiangtao, Liu, Zhengxin, Li, Shuai, Chen, Chao, He, Song
Format: Article
Language:English
Subjects:
Boron
Computer simulation
Efficiency
Energy consumption
Heterojunctions
Impurities
Metallurgy
Phosphorus
Photovoltaic cells
Screen printing
Silicon wafers
Solar cells
Solar energy
Studies
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container_title Advances in OptoElectronics (Hindawi)
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creator Yang, Xing
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description A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.
doi_str_mv 10.1155/2018/7368175
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subjects Boron
Computer simulation
Efficiency
Energy consumption
Heterojunctions
Impurities
Metallurgy
Phosphorus
Photovoltaic cells
Screen printing
Silicon wafers
Solar cells
Solar energy
Studies
title HIT Solar Cells with N-Type Low-Cost Metallurgical Si
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