A carbon monoxide interdigitated-capacitor gas sensor based upon a n-type Zn2SnO4 thin film

The microstructures of Zn 2 SnO 4 thin films were examined with a view to their exploitation for gas sensor. Zn 2 SnO 4 thin films were prepared using the radio frequency magnetron sputtering with various annealing temperatures. Zn 2 SnO 4 thin films were analyzed by X-ray diffraction and microstruc...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018, Vol.29 (2), p.1658-1663
Main Authors: Chen, Yih-Chien, Shen, Yan-Ru, Hsiao, Chih-Lung
Format: Article
Language:English
Subjects:
Annealing
Bulk density
Capacitors
Carbon monoxide
Characterization and Evaluation of Materials
Chemistry and Materials Science
Gas sensors
Magnetron sputtering
Materials Science
Microstructure
Optical and Electronic Materials
Photovoltaic cells
Sensors
Thin films
Tin dioxide
Zinc stannate
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Summary:The microstructures of Zn 2 SnO 4 thin films were examined with a view to their exploitation for gas sensor. Zn 2 SnO 4 thin films were prepared using the radio frequency magnetron sputtering with various annealing temperatures. Zn 2 SnO 4 thin films were analyzed by X-ray diffraction and microstructural observations. The Zn 2 SnO 4 thin films that were annealed at 700 and 900 °C contained second phase of ZnSnO 3 and SnO 2 , respectively. The cross-sectional SEM image of a Zn 2 SnO 4 thin film that were annealed at 700 °C showed a dense film lacking voids throughout the bulk. A carbon monoxide interdigitated-capacitor gas sensor, based on a n-type Zn 2 SnO 4 thin film was realized. The capacitance of the sensor device increases linearly with concentration of carbon monoxide.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-8078-9