Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol–gel grown MoS2/Si nanowire/Si devices

The effects of H 2 O 2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS 2 /Si nanowire (SiNW)/n-Si device are studied. The MoS 2 thin films are prepared using the sol–gel method. The thermionic emission–diffusion model is the dominant pr...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018-04, Vol.29 (7), p.6032-6039
Main Authors: Wu, Cheng-You, Lin, Yow-Jon, Chang, Hsing-Cheng, Chen, Ya-Hui
Format: Article
Language:English
Subjects:
Carrier transport
Characterization and Evaluation of Materials
Chemistry and Materials Science
Devices
Energy conversion efficiency
Hydrogen peroxide
Irradiation
Materials Science
Molybdenum disulfide
Nanowires
Optical and Electronic Materials
Optoelectronic devices
Photoelectric effect
Photoelectric emission
Sol-gel processes
Temperature dependence
Thermionic emission
Thin films
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Summary:The effects of H 2 O 2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS 2 /Si nanowire (SiNW)/n-Si device are studied. The MoS 2 thin films are prepared using the sol–gel method. The thermionic emission–diffusion model is the dominant process in the MoS 2 /SiNW/n-Si device when there is no H 2 O 2 treatment. However, carrier transport in MoS 2 /SiNW/n-Si devices that are subject to H 2 O 2 treatment is dominated by thermionic emission, so it demonstrates reliable rectification. Passivation of the SiNW surface increases the responsivity to solar irradiation. There is a low trap density at the MoS 2 /SiNW interfaces so the increase in photocurrent density for the MoS 2 /SiNW/n-Si device that is subject to H 2 O 2 treatment is due to greater internal power conversion efficiency. The photo-response results for MoS 2 /SiNW/n-Si devices that are subject to (are not subject to) H 2 O 2 treatment confirm that the decay in the photocurrent is due to the dominance of long-lifetime (short-lifetime) charge trapping. MoS 2 /SiNW/n-Si devices that are subject to H 2 O 2 treatment exhibit reliable responsivity to solar irradiation.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-018-8577-3