Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates

Cu 2 ZnSnSe 4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu 2 ZnSnSe 4 films are s...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.215-220
Main Authors: Stanchik, A. V., Gremenok, V. F., Bashkirov, S. A., Tivanov, M. S., Juškénas, R. L., Novikov, G. F., Giraitis, R., Saad, A. M.
Format: Article
Language:English
Subjects:
Composite Semiconductors
Copper zinc tin selenide
Crystal structure
Electron microscopy
Magnetic Materials
Magnetism
Metal foils
Microcrystalline
Molybdenum
Nanocrystalline
Physics
Physics and Astronomy
Porous
Raman spectra
Scanning electron microscopy
Substrates
Tantalum
Thin films
X ray spectra
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Summary:Cu 2 ZnSnSe 4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu 2 ZnSnSe 4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782618020197